器件名称:
2N5597
功能描述:
Silicon PNP Power Transistors
文件大小:
132.21KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5597 2N5599 2N5601 2N5603 Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL VCBO 固 体 导 电半 PARAMETER CONDITIONS 2N5597 Collector-base voltage 2N5599/5601 2N5603 VCEO Collector-emitter voltage INC S G N HA 2N5597 2N5603 N O C EMI Open emitter Open base Open collector R O T DUC VALUE -80 -100 -120 -60 -80 -100 -5 -2 UNIT V 2N5599/5601 V VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature V A W ℃ ℃ TC=25℃ 20 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.37 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5597 VCEO(SUS) Collector-emitter sustaining voltage 2N5599/5601 2N5603 VCEsat VBE ICBO ICEO IEBO Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current 2N5597 2N5599 2N5601 2N5603 CONDITIONS MIN -60 TYP. MAX UNIT IC=-50mA ;IB=0 -80 -100 V IC=-1A; IB=-0.1A IC=-1A ; VCE=-5V VCB=Rat……
