器件名称: 2N5602
功能描述: Silicon NPN Power Transistors
文件大小: 122.59KB 共3页
简 介:Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2N5598 2N5600 2N5602 2N5604
DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector-emitter saturation voltage APPLICATIONS ·For high frequency power amplifier ; audio power amplifier and drivers.
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER 2N5598 VCBO Collector-base voltage 2N5600/5602 2N5604 2N5598 VCEO Collector-emitter voltage 2N5600/5602 2N5604 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 60 80 100 80 100 120 5 2 20 150 -65~150 V A W ℃ ℃ V V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.37 UNIT ℃/W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5598 VCEO Collector-emitter sustaining voltage 2N5600/5602 2N5604 VCEsat VBE ICBO ICEO IEBO Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current 2N5598/5602 hFE DC current gain 2N5600/5604 2N5598/5602 fT Transition frequency 2N5600/5604
2N5598 2N5600 2N5602 2N5604
CONDITIONS
MIN 60
TYP.
MAX
UNIT
IC=50mA ;IB=0
80 100
V
IC=1A; IB=0.1A IC=1A ; VCE=5V VCB……
