器件名称: 2N5606
功能描述: Silicon NPN Power Transistors
文件大小: 132.1KB 共3页
简 介:Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5606 2N5608 2N5610 2N5612
DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION
Absolute maximum ratings(Ta=℃)
SYMBOL
固
体 导 电半
PARAMETER
2N5606 2N5608/5610 2N5612
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
INC
G N A H
SEM
Open emitter
N O C I
CONDITIONS
R O T DUC
VALUE 80 100 120 60 80 100
UNIT
V
2N5606 2N5608/5610 2N5612 Open base
V
VEBO IC PD Tj Tstg
Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature
Open collector
5 5
V A W ℃ ℃
TC=25℃
25 150 -65~150
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.37 UNIT ℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5606 VCEO(SUS) Collector-emitter sustaining voltage 2N5608/5610 2N5612 VCEsat VBE ICBO ICEO IEBO Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current
2N5606 2N5608 2N5610 2N5612
CONDITIONS
MIN 60
TYP.
MAX
UNIT
IC=50mA ;IB=0
80 100
V
IC=1A; IB=0.1A IC=2.5A ; VCE=5V VCB=Rated VCBO; IE=0 VCE= Rate……
