器件名称:
2N5612
功能描述:
Silicon NPN Power Transistors
文件大小:
132.1KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5606 2N5608 2N5610 2N5612 DESCRIPTION ·With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL 固 体 导 电半 PARAMETER 2N5606 2N5608/5610 2N5612 VCBO Collector-base voltage VCEO Collector-emitter voltage INC G N A H SEM Open emitter N O C I CONDITIONS R O T DUC VALUE 80 100 120 60 80 100 UNIT V 2N5606 2N5608/5610 2N5612 Open base V VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Open collector 5 5 V A W ℃ ℃ TC=25℃ 25 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 4.37 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5606 VCEO(SUS) Collector-emitter sustaining voltage 2N5608/5610 2N5612 VCEsat VBE ICBO ICEO IEBO Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current 2N5606 2N5608 2N5610 2N5612 CONDITIONS MIN 60 TYP. MAX UNIT IC=50mA ;IB=0 80 100 V IC=1A; IB=0.1A IC=2.5A ; VCE=5V VCB=Rated VCBO; IE=0 VCE= Rate……