器件名称:
2N5617
功能描述:
Silicon PNP Power Transistors
文件大小:
111.36KB 共3页
简 介:
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N5613 2N5615 2N5617 2N5619 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5613 VCBO Collector-base voltage 2N5615/5617 2N5619 2N5613 VCEO Collector-emitter voltage 2N5615/5617 2N5619 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -80 -100 -120 -60 -80 -100 -5 -5 50 150 -65~150 V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.5 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5613 VCEO(SUS) Collector-emitter sustaining voltage 2N5615/5617 2N5619 VCEsat VBE ICBO ICEO IEBO Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current 2N5613/5617 hFE DC current gain 2N5615/5619 2N5613/5617 2N5613 2N5615 2N5617 2N5619 SYMBOL CONDITIONS MIN -60 TYP. MAX UNIT IC=-50mA ;IB=0 -80 -100 V IC=-1A; IB=-0.1A IC=-2.5A ; VCE=-5V VCB=Rated VCBO; IE=0 VCE= Rated VCEO,IB……
