器件名称:
2N5619
功能描述:
Silicon PNP Power Transistors
文件大小:
123.53KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5613 2N5615 2N5617 2N5619 DESCRIPTION ·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL 固 导体 半 电 PARAMETER 2N5613 VCBO Collector-base voltage VCEO INCH ANG 2N5615/5617 2N5619 M E S E Open emitter D N O IC CONDITIONS R O T UC VALUE -80 -100 -120 -60 -80 -100 UNIT V 2N5613 2N5615/5617 2N5619 Open base Collector-emitter voltage V VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Open collector -5 -5 V A W ℃ ℃ TC=25℃ 50 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.5 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5613 VCEO(SUS) Collector-emitter sustaining voltage 2N5615/5617 2N5619 VCEsat VBE ICBO ICEO IEBO Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current 2N5613 2N5615 2N5617 2N5619 CONDITIONS MIN -60 TYP. MAX UNIT IC=-50mA ;IB=0 -80 -100 V IC=-1A; IB=-0.1A IC=-2.5A ; VCE=-5V VCB=Rated VCBO;……
