器件名称:
2N5624
功能描述:
Silicon NPN Power Transistors
文件大小:
123.41KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5622 2N5624 2N5626 2N5628 DESCRIPTION ·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For audio and general-purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL 固 导体 半 电 PARAMETER VCBO A H C IN Emitter-base voltage Collector current Collector-base voltage S E G N 2N5622 2N5624/5626 2N5628 2N5622 2N5624/5626 2N5628 EMIC Open emitter Open base CONDITIONS OND R O T UC VALUE 80 100 120 60 80 100 UNIT V VCEO Collector-emitter voltage V VEBO IC PD Tj Tstg Open collector 5 10 V A W ℃ ℃ Total power dissipation Junction temperature Storage temperature TC=25℃ 100 150 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.5 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5622 VCEO(SUS) Collector-emitter sustaining voltage 2N5624/5626 2N5628 VCEsat VBE ICBO IEBO Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current 2N5622 2N5624 2N5626 2N5628 CONDITIONS MIN 60 TYP. MAX UNIT IC=50mA ;IB=0 80 100 V IC=10A; IB=1A IC=5A ; VCE=5V VCB=Rated VCBO; IE=0 VEB=5V; IC=0 1.5 1.5 0.1 0.1 70 200 90 V V mA mA hFE 固 DC……
