器件名称:
2N5630
功能描述:
Silicon NPN Power Transistors
文件大小:
123.66KB 共3页
简 介:
Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2N6029 2N6030 APPLICATIONS ·For high voltage and high power amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5629 2N5630 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL VCBO PARAMETER 2N5629 Collector-base voltage 2N5630 2N5629 VCEO VEBO IC ICM IB PD Tj Tstg Collector-emitter voltage 2N5630 Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 120 7 16 20 5.0 200 150 -65~200 V A A A W ℃ ℃ Open emitter 120 100 V CONDITIONS VALUE 100 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5629 2N5630 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER Collector-emitter sustaining voltage 2N5629 IC=0.2A ;IB=0 2N5630 IC=10A; IB=1A IC=16A ;IB=4A IC=10A; IB=1A IC=8A ; VCE=2V VCB=ratedVCBO; IE=0 2N5629 ICEO Collector cut-off current 2N5630 Collector cut-off current (VBE(off)=1.5V) Emitter cut-off current 2N5629 hFE-1 DC current gain 2N5630 hFE-2 COB fT DC current gain Output capacitance Transition frequency IC=16A ; VCE=2V IE=0 ; VCB=10V ;f=0.1MHz IC=1A ; VCE=20V 1.0 IC=8A ; VCE=2V 20 4 500 pF MHz 80 VCE=60V; IB=0 VCE=ratedVCB VCE=rate……
