器件名称:
2N5632
功能描述:
Silicon NPN Power Transistors
文件大小:
111.79KB 共3页
简 介:
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5632 2N5633 2N5634 DESCRIPTION With TO-3 package Low collector saturation voltage High DC current gain APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5632 VCBO Collector-base voltage 2N5633 2N5634 2N5632 VCEO Collector-emitter voltage 2N5633 2N5634 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 100 120 140 100 120 140 7 10 150 150 -65~200 V A W V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.1 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5632 VCEO(SUS) Collector-emitter sustaining voltage 2N5633 2N5634 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage 2N5632 ICEO Collector cut-off current 2N5633 2N5634 ICEV IEBO Collector cut-off current Emitter cut-off current 2N5632 hFE DC current gain 2N5633 2N5634 fT Transition frequency IC=1A ; VCE=20V IC=5A ; VCE=5V IC=7A; IB=0.7A IC=10A ;IB=2A IC=10A ;IB=2A IC=5A ; VCE=5V VCE=50V; IB=0 V……
