器件名称:
2N5633
功能描述:
Silicon NPN Power Transistors
文件大小:
122.64KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5632 2N5633 2N5634 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL 固 导体 半 电 PARAMETER VCBO VCEO N A H INC Collector-emitter voltage Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature Collector-base voltage M E S GE 2N5632 2N5633 2N5634 2N5632 2N5633 2N5634 Open emitter D N O IC CONDITIONS R O T UC VALUE 100 120 140 100 UNIT V Open base 120 140 V VEBO IC PD Tj Tstg Open collector 7 10 V A W ℃ ℃ TC=25℃ 150 150 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.1 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5632 VCEO(SUS) Collector-emitter sustaining voltage 2N5633 2N5634 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage 2N5632 ICEO Collector cut-off current IC=7A; IB=0.7A IC=10A ;IB=2A IC=10A ;IB=2A IC=5A ; VCE=5V VCE=50V; IB=0 VCE=60V; IB=0 VCE=70V; IB=0 IC=0.2A ;IB=0 CONDITIONS 2N5632 2N5633 2N5634 MIN 100 12……