器件名称:
2N5760
功能描述:
Silicon NPN Power Transistors
文件大小:
123.13KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·For use in high power audio amplifier applications and high voltage switching regulator circuits PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5758 2N5759 2N5760 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL 固 导体 半 电 PARAMETER CONDITIONS 2N5758 2N5759 VCBO Collector-base voltage VCEO A H C IN Emitter-base voltage Collector current S E G N 2N5760 2N5758 2N5759 2N5760 Open emitter EMIC OND R O T UC VALUE 100 120 140 100 120 140 UNIT V Collector-emitter voltage Open base V VEBO IC ICM IB PD Tj Tstg Open collector 7 6 10 4 V A A A W ℃ ℃ Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ 150 150 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5758 VCEO(SUS) Collector-emitter sustaining voltage 2N5759 2N5760 VCEsat-1 VCEsat-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage 2N5758 ICEO Collector cut-off current 2N5759 2N5760 IC=3A; IB=0.3A IC=6A ;IB=1.2A IC=3A ; VCE=2V VCE=50V; IB=0 VCE=60V; IB=0 VCE=70V; IB=0 ……
