器件名称:
2N5805
功能描述:
Silicon NPN Power Transistors
文件大小:
121.78KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·High breakdown voltage APPLICATIONS ·Switching regulator ·Inverters ·Solenoid and relay drivers ·Motor controls PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5804 2N5805 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL 固 导体 半 电 PARAMETER CONDITIONS VCBO Collector-base voltage VCEO VEBO IC PD Tj Tstg INCH Collector-emitter voltage S E G AN 2N5805 2N5804 2N5805 2N5804 Open emitter EMIC OND R O T UC VALUE 300 375 225 300 6 5 UNIT V Open base V Emitter-base voltage Open collector V A W ℃ ℃ Collector current Total Power Dissipation Junction temperature Storage temperature TC=25℃ 110 150 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.25 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5804 2N5805 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N5804 VCEO(SUS) Collector-emitter sustaining voltage 2N5805 IC=0.1A ;IB=0 225 V 300 VCEsat Collector-emitter saturation voltage IC=5A; IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V ICEO Collector cut-off current VCE=RatedVCE; IB=0 10 mA 2N5804 ICEV Collector cut-off current 12 VCE=RatedVCE; VBE(off)=1.5V mA IEBO 固电 IN Emitter cut-off current 体 半导 2N5805 VEB=7V; IC=0 hFE DC c……
