器件名称:
2N5839
功能描述:
Silicon NPN Power Transistors
文件大小:
122.02KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5838 2N5839 2N5840 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·High breakdown voltage APPLICATIONS ·For use in switching power supply and other inductive switching circuits. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL 固 导体 半 电 PARAMETER CONDITIONS 2N5838 2N5839 VCBO Collector-base voltage VCEO INCH ANG 2N5840 2N5838 2N5839 M E S E Open base Open emitter D N O IC R O T UC VALUE 275 300 375 250 275 350 UNIT V Collector-emitter voltage V 2N5840 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector 6 3 100 150 -65~200 V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.25 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5838 VCEO(SUS) Collector-emitter sustaining voltage 2N5839 2N5840 VCEsat VBEsat ICBO ICEV IEBO Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current IC=2A; IB=0.4A IC=2A; IB=0.4A IC=0.1A ;IB=0 2N5838 2N5839 2N5840 CONDITIONS MIN 250 275 350 TYP. MAX UNIT V 0.8 1.5 1.0 1.0 1.0 8 V V mA mA mA VCB=Rated VCBO; ……
