器件名称:
2N5867
功能描述:
Silicon PNP Power Transistors
文件大小:
123.37KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5867 2N5868 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage APPLICATIONS ·For medium-speed switching and amplifier applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO 固 导体 半 电 PARAMETER CONDITIONS 2N5867 Collector-base voltage VCEO VEBO IC PD Tj Tstg INCH Collector-emitter voltage ANG 2N5868 2N5867 IC M E ES Open emitter Open base Open collector TC=25℃ OND R O T UC VALUE -60 -80 -60 -80 -5 -5 87.5 150 -65~200 UNIT V V 2N5868 Emitter-base voltage V A W ℃ ℃ Collector current Total Power Dissipation Junction temperature Storage temperature THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5867 2N5868 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N5867 VCEO(SUS) Collector-emitter sustaining voltage 2N5868 IC=-0.1A ;IB=0 -60 V -80 VCEsat Collector-emitter saturation voltage IC=-5A;IB=-1A -1.0 V VBEsat Base-emitter saturation voltage IC=-5A; IB=-1A -1.5 V ICBO Collector cut-off current VCB=ratedVCBO; IB=0 -1.0 mA 2N5867 ICEO Collector cut-off current VCE=-30V; IB=0 -2.0 VCE=-40V; IB=0 mA IEBO hFE 固 Emitter cut-off current 导体 半 电 2N5868 VEB=-5V; IC=0 DC……
