器件名称: 2N5873
功能描述: Silicon NPN Power Transistors
文件大小: 111.02KB 共3页
简 介:SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5873 2N5874
DESCRIPTION With TO-3 package Low collector saturation voltage APPLICATIONS For medium-speed switching and amplifier applications
PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL PARAMETER 2N5873 VCBO Collector-base voltage 2N5874 2N5873 VCEO Collector-emitter voltage 2N5874 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base 80 5 7 115 150 -65~200 V A W Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5873 2N5874
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N5873 IC=0.1A ;IB=0 2N5874 IC=5A;IB=0.5A IC=5A; IB=0.5A VCB=ratedVCBO; IB=0 2N5873 ICEO Collector cut-off current 2N5874 IEBO hFE fT Emitter cut-off current DC current gain Trainsistion frequency VCE=40V; IB=0 VEB=5V; IC=0 IC=2.5A ; VCE=4V IC=0.5A ; VCE=10V 20 4 1.0 100 MHz mA VCE=30V; IB=0 2.0 mA 80 1.0 1.5 1.0 V V mA CONDITIONS MIN 60 V TYP. MAX UNIT
SYMBOL
VCEO(SUS)
Collector-emitter sustaining voltage
VCEsat VBEsat ICBO
Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current
2
SavantIC Semiconducto……
