器件名称:
2N5879
功能描述:
Silicon PNP Power Transistors
文件大小:
113.25KB 共3页
简 介:
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION With TO-3 package Low collector saturation voltage Complement to type 2N5881 2N5882 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5879 2N5880 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER 2N5879 Collector-base voltage 2N5880 2N5879 VCEO VEBO IC ICM IB PD Tj Tstg Collector-emitter voltage 2N5880 Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base -80 -5 -15 -30 -5 160 150 -65~200 V A A A W Open emitter -80 -60 V CONDITIONS VALUE -60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.1 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N5879 2N5880 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5879 IC=-0.2A ;IB=0 2N5880 IC=-7A;IB=-0.7A IC=-15A;IB=-3.75A IC=-15A;IB=-3.75A IC=-6A ; VCE=-4V VCB=ratedVCBO; IB=0 2N5879 2N5880 VCE=-30V; IB=0 -1.0 VCE=-40V; IB=0 VCE=ratedVCE; VBE=-1.5V TC=150 VEB=-5V; IC=0 IC=-2A ; VCE=-4V IC=-6A ; VCE=-4V IC=-15A ; VCE=-4V IC=-1A ; VCE=-10V 35 20 4 4 MHz 100 -0.5 -5.0 -1.0 mA mA mA -80 -1.0 -4.0 -2.5 -1.5 -0.5 V V V V mA CONDITIONS MIN -60 V TYP. MAX UNIT SYMBOL VCEO(SUS) Collector-emitter sustaining volta……
