器件名称:
2N5881
功能描述:
Silicon NPN Power Transistors
文件大小:
112.74KB 共3页
简 介:
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-3 package Low collector saturation voltage Complement to type 2N5879 2N5880 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5881 2N5882 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VCBO PARAMETER 2N5881 Collector-base voltage 2N5882 2N5881 VCEO VEBO IC ICM IB PD Tj Tstg Collector-emitter voltage 2N5882 Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25 Open collector Open base 80 5 15 30 5 160 150 -65~200 V A A A W Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.1 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N5881 2N5882 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5881 IC=0.2A ;IB=0 2N5882 IC=7A;IB=0.7A IC=15A;IB=3.75A IC=15A;IB=3.75A IC=6A ; VCE=4V VCB=ratedVCBO; IB=0 2N5881 ICEO Collector cut-off current 2N5882 ICEX IEBO hFE-1 hFE-2 hFE-3 fT Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Trainsistion frequency VCE=40V; IB=0 VCE=ratedVCE; VBE=1.5V TC=150 VEB=5V; IC=0 IC=2A ; VCE=4V IC=6A ; VCE=4V IC=15A ; VCE=4V IC=1A ; VCE=10V 35 20 4 4 MHz 100 0.5 5.0 1.0 mA mA ……
