器件名称:
2N5990
功能描述:
Silicon NPN Power Transistors
文件大小:
123.01KB 共3页
简 介:
Product Specification www.jmnic.com Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2N5986 2N5987 2N5988 ·Low collector-emitter saturation voltage APPLICATIONS ·Designed for use in general purpose power amplifier and switching circuits. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2N5989 2N5990 2N5991 Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N5989 VCBO Collector-base voltage 2N5990 2N5991 2N5989 VCEO Collector-emitter voltage 2N5990 2N5991 VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE 60 80 100 40 60 80 5 12 20 4 100 150 -65~150 V A A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.25 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5989 VCEO Collector-emitter sustaining voltage 2N5990 2N5991 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage 2N5989 ICEO Collector cut-off current 2N5990 2N5991 ICEX IEBO hFE-1 hFE-2 hFE-3 COB fT Collector cut-off current Emitter cut-off current DC current gain DC cu……
