器件名称:
2N5991
功能描述:
Silicon NPN Power Transistors
文件大小:
127.5KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2N5986/5987/5988 ·Low collector saturation voltage APPLICATIONS ·Designed for use in general purpose power amplifier and switching circuits. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2N5989 2N5990 2N5991 Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL VCBO 固电 体 半导 PARAMETER CONDITIONS 2N5989 2N5990 Collector-base voltage VCEO INCH Base current Collector-emitter voltage ANG 2N5991 2N5989 2N5990 M E S E Open base Open emitter D N O IC R O T UC VALUE 60 80 100 40 60 80 UNIT V V 2N5991 Open collector VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak 5 12 20 4 V A A A W ℃ ℃ Collector power dissipation Junction temperature Storage temperature TC=25℃ 100 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX 1.25 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N5989 VCEO(SUS) Collector-emitter sustaining voltage 2N5990 2N5991 VCEsat-1 VCEsat-2 VBEsat VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage 2N5989 ICEO Collector cut-off current IC=6A ;IB=0.6A IC=12A; IB=1.8A IC=12A; IB=1.8A……
