器件名称:
2N6029
功能描述:
Silicon PNP Power Transistors
文件大小:
110.03KB 共3页
简 介:
Product Specification www.jmnic.com Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2N5629 2N5630 APPLICATIONS ·For high voltage and high power amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6029 2N6030 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL VCBO PARAMETER 2N6029 Collector-base voltage 2N6030 2N6029 VCEO VEBO IC ICM IB PD Tj Tstg Collector-emitter voltage 2N6030 Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 120 7 16 20 5.0 200 150 -65~200 V A A A W ℃ ℃ Open emitter 120 100 V CONDITIONS VALUE 100 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ℃/W JMnic Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6029 2N6030 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER Collector-emitter sustaining voltage 2N6029 IC=0.2A ;IB=0 2N6030 IC=10A; IB=1A IC=16A ;IB=4A IC=10A; IB=1A IC=8A ; VCE=2V VCB=ratedVCBO; IE=0 2N6029 ICEO Collector cut-off current 2N6030 Collector cut-off current (VBE(off)=1.5V) Emitter cut-off current 2N6029 hFE-1 DC current gain 2N6030 hFE-2 COB fT DC current gain Output capacitance Transition frequency IC=16A ; VCE=2V IE=0 ; VCB=10V ;f=0.1MHz IC=1A ; VCE=20V 1.0 IC=8A ; VCE=2V 20 4 1000 pF MHz 80 VCE=60V; IB=0 VCE=ratedVCB VCE=rat……
