器件名称:
2N6030
功能描述:
Silicon PNP Power Transistors
文件大小:
123.05KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2N5629 2N5630 ·High power dissipations APPLICATIONS ·For high voltage and high power amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6029 2N6030 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL VCBO 固电 IN Collector-base voltage 体 半导 PARAMETER CONDITIONS 2N6029 Open emitter 2N6030 VCEO Collector-emitter voltage VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current G N A CH 2N6029 2N6030 IC M E ES Open base Open collector OND R O T UC VALUE -100 -120 -100 -120 -7 -16 -20 -5.0 UNIT V V V A A A W ℃ ℃ Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature TC=25℃ 200 150 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6029 2N6030 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6029 IC=-0.2A ;IB=0 2N6030 VCEsat-1 VCEsat-2 VBEsat VBE ICBO Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current IC=-10A; IB=-1A IC=-16A ;IB=-4A IC=-10A; IB=-1A IC=-8A ; VCE=-2V VCB=ratedVCBO; IE=0 2N6029 VCE=-50V; IB=0 VCE=-60V; IB=0 VCE=ratedVCB -120 -1.0 -2.0 -1.8 -1.……
