器件名称:
2N6035
功能描述:
Silicon PNP Power Transistors
文件大小:
128.8KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2N6037/6038/6039 ·DARLINGTON ·High DC current gain APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications PINNING(see Fig.2) PIN 1 2 3 DESCRIPTION Emitter Collector Base 2N6034 2N6035 2N6036 Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 固 体 导 电半 2N6034 VCBO Collector-base voltage VCEO Collector-emitter voltage INC S G N HA 2N6035 2N6036 2N6034 2N6035 2N6036 Open emitter N O C EMI CONDITIONS R O T DUC VALUE -40 -60 -80 -40 -60 -80 UNIT V Open base V VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total Power Dissipation Junction temperature Storage temperature Open collector -5 -4 -8 -0.1 V A A A W ℃ ℃ TC=25℃ 40 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 3.12 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6034 VCEO(SUS) Collector-emitter sustaining voltage 2N6035 2N6036 VCEsat-1 VCEsat-2 VBEsat VBE ICEO ICEX ICBO IEBO hFE-1 hFE-2 hFE-3 COB Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current IC=-2A; IB=-8mA IC=-4A; IB=-40mA IC=-4A; IB=-40mA IC=-2A ; VCE=-3V IC=-0.1A ;……
