器件名称:
2SC1027
功能描述:
Silicon NPN Power Transistors
文件大小:
118.66KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1027 DESCRIPTION ·With TO-3 package ·High power dissipation ·Low collector saturation voltage APPLICATIONS ·Switching regulators ·DC-DC convertor ·General purpose power amplifiers PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg 固 导体 半 电 PARAMETER Fig.1 simplified outline (TO-3) and symbol N A H INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current M E S GE D N O IC CONDITIONS R O T UC VALUE 250 80 5 6 UNIT V V V A W ℃ ℃ Open emitter Open base Open collector Collector power dissipation Junction temperature Storage temperature TC=25℃ 50 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1027 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 80 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage IC=1mA ;IE=0 IE=1mA ;IC=0 250 V Emitter-base breakdown voltage 5 V VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=0.5A 1.5 V ICBO Collector cut-off current VCB=250V; IE=0 0.1 mA IEBO Emitter cut-off current hFE 固 DC current gain 导体 半 电 VEB=5V; IC=0 0.1 mA IC=5A ; VCE=2V N A H INC M E S GE D N O IC R O T UC 10 2 I……