器件名称:
2SC1096
功能描述:
Silicon NPN Power Transistors
文件大小:
122.66KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-202 package ·Low breakdown voltage ·High current ·High fT APPLICATIONS ·For audio frequency power amplifier and low speed switching applications ·Suitable for output stages of 3 to 5 watts car radio sets and car stereo PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SC1096 Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB 固 导体 半 电 PARAMETER Open base Fig.1 simplified outline (TO-202) and symbol G N A INCH Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current M E S E CONDITIONS D N O IC R O T UC VALUE 40 30 5 3 6 0.6 UNIT V V V A A A Open emitter Open collector Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 1.2 W 10 150 -55~150 ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBEsat V(BR)CEO ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance CONDITIONS IC=3A ;IB=0.3A IC=3A ;IB=0.3A IC=10mA; IB=0 VCB=30V;IE=0 VEB=3V; IC=0 IC=20mA ; VCE=5V IC=1.0A ; VCE=5V IE=0; VCB=10V;f=1.0MHz IC=0.1A ; VCE=5V 20 40 55 30 MIN 2SC1096 TYP. MAX 2.0……