器件名称:
2SC1116
功能描述:
Silicon NPN Power Transistors
文件大小:
118.68KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1116 DESCRIPTION ·With TO-3 package ·Wide area of safe operation APPLICATIONS ·For audio and general purpose applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER 固 导体 半 电 M E S GE N A H INC Collector-emitter voltage Emitter-base voltage Collector current Collector-base voltage Open emitter D N O IC CONDITIONS R O T UC VALUE 180 120 6 10 UNIT V V V A W ℃ ℃ Open base Open collector Collector power dissipation Junction temperature Storage temperature TC=25℃ 100 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1116 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0 120 V V(BR)CBO V(BR)EBO Collector-base breakdown voltage IC=1mA ;IE=0 IE=1mA ;IC=0 180 V Emitter-base breakdown voltage 6 V VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 2.0 V ICBO Collector cut-off current VCB=180V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain fT 固 Transition frequency 导体 半 电 G N A CH IC=3A ; VCE=4V 50 IC=1A ; VCE=12V IN IC M E ES C U D ON 10 TOR MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transis……
