器件名称:
2SC1141
功能描述:
Silicon NPN Power Transistors
文件大小:
129.77KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1141 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Converters Inverters Switching regulators Motor controls PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Tmb=25℃ Open emitter Open base Open collector CONDITIONS MAX 600 300 7 15 150 200 -65~200 UNIT V V V A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER Thermal resistance from junction to mounting base VALUE 1.0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=0.1A ; IB=0 IE=1mA ; IC=0 IC=8A; IB=1.6A IC=8A; IB=1.6A VCB=600V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=5V IC=7.5A ; VCE=5V IC=1A ; VCE=5V 15 10 MIN 300 7 2SC1141 TYP. MAX UNIT V V 1.5 1.6 0.1 0.1 50 25 10 V V mA mA MHz 2 Inchange Semiconductor Product Specif……
