器件名称:
2SC1162
功能描述:
Silicon NPN Power Transistors
文件大小:
146.37KB 共4页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1162 DESCRIPTION ·With TO-126 package ·Complement to type 2SA715 APPLICATIONS ·For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base · Absolute Maximun Ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM 固 Collector-base voltage 导体 半 电 PARAMETER CONDITIONS G N A INCH Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature Collector-emitter voltage M E S E Open base Ta=25℃ Open emitter D N O IC R O T UC VALUE 35 35 5 2.5 3 0.75 UNIT V V V A A Open collector PC W TC=25℃ 10 150 -55~150 ℃ ℃ Tj Tstg Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1162 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA IB=0 IC=1mA ;IE=0 IE=1mA; IC=0 IC=2.0A; IB=0.2A(Pulse test) IC=1.5A ; VCE=2V(Pulse test) VCB=35V; IE=0 VEB=3V; IC=0 IC=0.5A ; VCE=2V IC=1.5A ; VCE=2V(Pulse test) IC=0.2A ; VCE=2V(Pulse test) 60 MIN 35 35 5 1.0 1.5 20 1 TYP. MAX UNIT V V V V V μA μA 固电 C 体 半导 Transition ……