器件名称:
2SC1325
功能描述:
Silicon NPN Power Transistors
文件大小:
130.26KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1325 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Designed for use in large screen color deflection circuits PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 1500 600 6 6 12 2 80 150 -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1. 56 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICES ICBO IEBO hFE-1 hFE-2 ts tf PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Storage time IC=5A ;IB1=-IB2=1.0A PW=20μs Fall time CONDITIONS IC=100mA; IB=0 IC=5 A;IB=1.2 A IC=5 A;IB=1.2 A VCE=1500V;VBE=0 VCB=1000V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=15V IC=5A ; VCE=15V 10 5 MIN 600 TYP. 2SC1325 MAX UNIT V 4.0 1.1 1.0 20 200 45 35 10 0.8 V ……
