器件名称:
2SC1413A
功能描述:
Silicon NPN Power Transistors
文件大小:
127.67KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1413A DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS For TV horizontal deflection output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 1500 500 5 5 50 150 -55~150 UNIT V V V A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1413A TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 500 V V(BR)EBO Emitter-base breakdown votage IE=1.0mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=5 A;IB=1.2 A 10 V VBEsat Base-emitter saturation voltage IC=5 A;IB=1.2 A 2 V ICBO Collector cut-off current VCB=1500V;IE=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE DC current gain IC=1A ; VCE=5V 8 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1413A Fig.2 Outline dimensions 3 ……
