器件名称: 2SC1846
功能描述: Silicon NPN Power Transistors
文件大小: 186.19KB 共4页
简 介:JMnic
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ·With TO-126 package ·Complement to type 2SA885 ·Low collector saturation APPLICATIONS ·For medium output power amplification
PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base
2SC1846
·
Absolute Maximun Ratings (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak CONDITIONS Open emitter Open base Open collector VALUE 45 35 5 1 1.5 1.2*1 PC Collector power dissipation TC=25℃ 5* Tj Tstg Junction temperature Storage temperature
2
UNIT V V V A A
W
150 -55~150
℃ ℃
Note) *1: Without heat sink *2: With a 100 × 100 × 2 mm A1 heat sink
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCEsat ICBO ICEO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=2mA;IB=0 IC=1mA ;IE=0 IC=0.5A ;IB=50mA VCB=20V; IE=0 VCE=20V; IB=0 VEB=5V; IC=0 IC=0.5A ; VCE=10V IC=1A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=50mA ; VCB=10V,f=200MHz 85 50 MIN 35 45
2SC1846
TYP.
MAX
UNIT V V
0.5 0.1 100 10 340
V μA μA μA
20 200
pF MHz
Q
hFE-1 Classifications R 120-24……
