器件名称:
2SC3284
功能描述:
Silicon NPN Power Transistors
文件大小:
158.74KB 共4页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3284 DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1303 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg 固电 Collector-base voltage 体 导 半 PARAMETER A H C IN Collector current Base current Collector-emitter voltage Emitter-base voltage EM S E NG Open base TC=25℃ Open emitter D N O IC CONDITIONS R O T UC VALUE 150 150 5 14 3 125 150 -55~150 UNIT V V V A A W ℃ ℃ Open collector Collector power dissipation Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE Cob fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=25mA ;IB=0 IC=5A IB=0.5A VCB=150V IE=0 VEB=5V; IC=0 IC=5A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IE=-2A ; VCE=12V 50 200 60 MIN 150 2SC3284 TYP. MAX UNIT V 2.0 100 100 180 V μA μA pF MHz Switching times ton ts tf 固电 Fall time Turn-on time Storage time 体 导 半 INC P 70-140 EM S E G N A H Y 90-180 IC=5A;RL=12Ω IB1=- IB2=0.5A VCC=60V D N O IC R O T UC 0.20 1.50 0.35 μs μs μs hF……
