器件名称:
2SC3678
功能描述:
Silicon NPN Power Transistors
文件大小:
153.94KB 共4页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3678 DESCRIPTION ·With TO-3PN package ·High voltage switching transistor APPLICATIONS ·Switching regulator and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg 固电 Collector-base voltage 体 导 半 PARAMETER A H C IN Collector current Base current Collector-emitter voltage Emitter-base voltage S E NG Open emitter Open base C I M E CONDITIONS OND R O T UC VALUE 900 800 7 3 6 1.5 UNIT V V V A A A W ℃ ℃ Open collector Collector current-pulse Collector power dissipation Junction temperature Storage temperature TC=25℃ 80 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3678 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE Cob fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=10mA; IB=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=800V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IE=-0.3A ; VCE=12V 10 50 6 MIN 800 0.5 1.2 100 100 30 pF MHz TYP. MAX UNIT V V V μA μA Switching times ton ts tf 固电 IN Fall time 体 导 半 Turn-on time Storage ……
