器件名称:
2SC3834A
功能描述:
Silicon NPN Power Transistors
文件大小:
124.74KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2834 2SC2834A DESCRIPTION ·With TO-3PN package ·High speed switching ·High VCBO ·Low collector saturation voltage APPLICATIONS ·For high speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL 固电 体 导 半 PARAMETER VCBO VCEO VEBO IC ICM IB A H C IN Collector-base voltage EM S E NG 2SC2834 2SC3834A D N O IC CONDITIONS R O T UC VALUE 800 900 500 8 7 15 4 UNIT Open emitter V Collector-emitter voltage Open base Open collector V V A A A Emitter-base voltage Collector current (DC) Collector current-peak Base current (DC) Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 2.5 W 100 150 -55~150 ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SC2834 2SC2834A MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;L=25mH 500 V VCEsat VBEsat Collector-emitter saturation voltage IC=5A ;IB=1A IC=5A ;IB=1A 1.0 V Base-emitter saturation voltage 1.5 V 2SC2834 ICBO Collector cut-off current 2SC3834A VCB=800V; IE=0 0.1 VCB=900V; IE=0 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=0.1A ; VCE=5V hFE-2 fT DC current gain 固电 Transit……
