器件名称:
2SC3857
功能描述:
Silicon NPN Power Transistors
文件大小:
170.09KB 共4页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3857 DESCRIPTION ·With MT-200 package ·Complement to type 2SA1493 APPLICATIONS ·Audio and general purpose PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg 固电 Collector-base voltage 体 导 半 PARAMETER A H C IN Collector current Base current Collector-emitter voltage Emitter-base voltage EM S E NG Open base Open emitter D N O IC CONDITIONS R O T UC VALUE 200 200 6 15 5 UNIT V V V A A W ℃ ℃ Open collector Collector power dissipation Junction temperature Storage temperature TC=25℃ 150 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=10 A;IB=1 A VCB=200V; IE=0 VEB=6V; IC=0 IC=5A ; VCE=4V IE=-0.5A ; VCE=12V IE=0; VCB=10V;f=1MHz 50 20 250 MIN 200 TYP. 2SC3857 MAX UNIT V 3.0 100 100 180 V μA μA MHz pF Switching times ton ts tf Turn-on time 固电 Fall time Storage time 体 导 半 hFE classifications O P 70-140 A H C IN Y EM S E NG IC=5A;RL=12Ω IB1=- IB2=0.5A VCC=60V D N O IC R……
