器件名称:
2SC4008
功能描述:
isc Silicon NPN Power Transistor
文件大小:
241.81KB 共2页
简 介:
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4008 DESCRIPTION Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V (Min) Wide Area of Safe Operation Complement to Type 2SA1635 APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w s c s i . w VALUE UNIT 100 V 80 V 6 V 4 A 6 A 30 W n c . i m e IC Collector Current-Continuous ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE fT COB PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain CONDITIONS IC= 50μA; IE= 0 IC= 25mA; IB= 0 IE= 50μA; IC= 0 IC= 2A; IB= 0.2A B 2SC4008 MIN 100 80 6 TYP. MAX UNIT V V V 1.0 1.5 10 10 500 10 60 V V μA μA IC= 2A; IB= 0.2A B VCB= 100V; IE= 0 VEB= 6V; IC= 0 Current-Gain—Ban……