器件名称:
2SC4026
功能描述:
Silicon NPN Power Transistors
文件大小:
148.45KB 共4页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4026 DESCRIPTION ·With TO-220Fa package ·High breakdown voltage ·High speed switching ·Wide area of safe operation (SOA) APPLICATIONS ·For high breakdown voltage high-speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol · Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER 固电 体 导 半 INC Collector-base voltage Collector-emitter voltage EM S E G N A H Open base D N O IC CONDITIONS R O T UC VALUE 500 400 7 5 10 1.5 UNIT V V V A A A Open emitter Emitter-base voltage Open collector Collector current Collector current-peak Base current TC=25℃ 35 W 2 150 -55~150 ℃ ℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA , IB=0 IC=2A ;IB=0.4A IC=2A ;IB=0.4A VCB=500V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=5V IC=2A ; VCE=5V IC=0.5A ; VCE=10V;f=1MHz 15 8 5 MIN 400 TYP. 2SC4026 MAX UNIT V 1.0 1.5 100 100 V V μA μA Switching times ton ts tf 固电 Fall t……
