器件名称:
2SC4106
功能描述:
isc Silicon NPN Power Transistor
文件大小:
252.05KB 共2页
简 介:
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4106 DESCRIPTION High Collector-Emitter Breakdown Voltage : V(BR)CEO= 400V(Min.) High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w s c s i . w 500 400 7 7 14 3 50 V V n c . i m e V A ICM Collector Current-Peak A IB B Base Current-Continuous Collector Power Dissipation@TC=25℃ A PC Collector Power Dissipation@Ta=25℃ 1.75 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Gurrent Gain DC Gurrent Gain CONDITIONS IC= 5mA ; RBE= ∞ IC= 1mA ; IE= 0 IE= 1mA ; IC= 0 IC= 4A; IB= 0.8A B 2SC4106 MIN 400 500 7 TYP. MAX UNIT V V V 0.8 1.5 10 10 50 V V μA μA IC= 4A; IB= 0.8A B VCB= 400V; IE= 0 Current-Gain……
