器件名称:
2SC4107
功能描述:
Silicon NPN Power Transistors
文件大小:
142.66KB 共4页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4107 DESCRIPTION With TO-220C package High breakdown voltage and high reliability Fast switching speed. Wide area of safe operation APPLICATIONS 400V/10A switching regulator applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 60 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 10 20 3.5 1.75 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=5mA ; RBE=∞ IC=1mA ; IE=0 IE=1mA ; IC=0 IC=6A; IB=1.2A IC=6A; IB=1.2A VCB=400V ;IE=0 VEB=5V; IC=0 IC=1.2A ; VCE=5V IC=6A ; VCE=5V IC=10mA ; VCE=5V IC=1.2A ; VCE=10V f=1MHz ; VCB=10V 15 10 10……
