器件名称:
2SC4110
功能描述:
isc Silicon NPN Power Transistor
文件大小:
246.01KB 共2页
简 介:
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4110 DESCRIPTION High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation @ TC=25℃ w w s c s i . w VALUE 500 UNIT V 400 7 V V 25 40 8 160 W 2.5 150 -55~150 ℃ ℃ A A A n c . i m e PC Collector Power Dissipation @ Ta=25℃ TJ Tstg Junction Temperature Storage Temperature Range isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain CONDITIONS IC= 1mA; IE= 0 IC= 10mA; RBE= ∞ IE= 1m A; IC= 0 IC= 16A; IB= 3.2A IC= 16A; IB= 3.2A VCB= 400V ; IE= 0 MIN 500 400 7 2SC4110 TYP. MAX UNIT V V V 0.8 1.5 V V μA μA Current-Gain—Bandwidth Produ……
