器件名称: 2SC4131
功能描述: isc Silicon NPN Power Transistor
文件大小: 240.69KB 共2页
简 介:INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4131
DESCRIPTION Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) Low Collector Saturation Voltage: VCE(sat)= 0.5V(Max)@ IC= 5A
APPLICATIONS Designed for DC-DC converter, emergency lighting inverter and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
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UNIT 100 V 50 V 15 V 15 A 25 A 4 A
n c . i m e
ICP
Collector Current-Peak
IB
B
Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature
PC
60
W
TJ
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC4131
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= 25mA; IB= 0
50
V
VCE(sat) VBE(sat) ICBO IEBO
Collector-Emitter Saturation Voltage
IC= 5A; IB= 80mA
B
0.5
V
Base-Emitter Saturation Voltage
IC= 5A; IB= 80mA
B
1.2
V μA μA
Collector Cutoff Current
VCB= 100V ; IE= 0 VEB= 15V ; IC= 0
10
Emitter Cutoff Current
10
hFE
DC current gain
IC= 5A ; VCE= 1V
fT
Current-Gain—Bandwidth Product
COB
Output Capacitance
Switching times
ton tstg tf
Turn-on Time
Storage Time
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I……
