器件名称:
2SC4157
功能描述:
Silicon NPN Power Transistors
文件大小:
122.62KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3P(I) package ·High VCEO ·High speed switching APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC4157 Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg 固电 体 导 半 PARAMETER A H C IN Base current Collector-base voltage Collector-emitter voltage EM S E NG Open emitter D N O IC CONDITIONS R O T UC VALUE 600 450 8 10 20 5 UNIT V V V A A A W ℃ ℃ Open base Open collector Emitter-base voltage Collector current-DC Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25℃ 100 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ,IB=0 IC=1mA ,IE=0 IC=5A; IB=1A IC=5A; IB=1A VCB=500V; IE=0 VEB=8V; IC=0 IC=5A ; VCE=5V 15 MIN 450 600 TYP. 2SC4157 MAX UNIT V V 1.0 2.0 100 1.0 V V μA mA Switching times tr tstg tf Rise time 固电 Fall time Storage time 体……
