器件名称:
2SC4159
功能描述:
Silicon NPN Power Transistor
文件大小:
238.64KB 共2页
简 介:
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4159 DESCRIPTION High Collector-Emitter Breakdown VoltageV(BR)CEO= 160V (Min) Large Current Capacity Complement to Type 2SA1606 APPLICATIONS Designed for high-voltage switching, AF power amplifier, 100W output predrivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w ww VALUE s c s .i UNIT 180 V 160 V 6.0 V 1.5 A 3 A n c . i m e IC Collector Current-Continuous ICM Collector Current-Peak Total Power Dissipation @ TC=25℃ Junction Temperature PC 15 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(on) ICBO IEBO hFE fT COB PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain—Bandwidth Product Output Capacitance CONDITIONS IC= 1mA; IE= 0 IC= 1mA; RBE= ∞ IE= 1mA; IC= 0 IC= 500mA; IB= 50mA IC= 10mA; VCE= 5V VCB= 120V; IE= 0 VEB= 4V; IC= 0 MIN 180 160 6 0.3 2SC4159 TYP. MAX UNIT V V V V 1.5 10 10 200 100 23 V μA μA Switching Times ton tstg tf Turn-on Time Storag……
