器件名称:
2SC4160
功能描述:
Silicon NPN Power Transistors
文件大小:
142.45KB 共3页
简 介:
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4160 DESCRIPTION ·With TO-220F package ·High breakdown voltage. ·High reliability. ·Fast switching speed ·Wide ASO (Safe Operating Area) APPLICATIONS ·400V/4A Switching Regulator Applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25℃ Collector dissipation 2 Junction temperature Storage temperature 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 4 8 1.5 25 W UNIT V V V A A A JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO VCBO VEBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 hFE-3 COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=5mA ; RBE=∞ IC=1mA ; IE=0 IE=1mA ; IC=0 IC=2A ;IB=0.4A IC=2A ;IB=0.4A VCB=400V; IE=0 VEB=5V; IC=0 IC=0.4A ; VCE=5V IC=2A ; VCE=5V IC=10mA ; VCE=5V IE=0; VCB=10V;f=1MHz IC=0.4A ; VCE=10V 15 10 10 50 20 MIN 400 500……
