器件名称:
2SC4242
功能描述:
isc Silicon NPN Power Transistor
文件大小:
240.47KB 共2页
简 介:
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4242 DESCRIPTION Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min) Fast Switching Speed Collector-Emitter Saturation Voltage: VCE(sat)= 0.8V(Max.)@ IC= 4.0A APPLICATIONS Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regulator’s, inverters, DC-DC converter. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE 450 UNIT V Collector Current-Continuous Collector Current-Peak w w s c s i . w 400 8 V V 7 A 14 2 40 150 -55~150 A A W ℃ ℃ n c . i m e Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 3.125 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC4242 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 450 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 8 V VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Volt……
