器件名称:
2SC4245
功能描述:
isc Silicon NPN RF Transistor
文件大小:
194.67KB 共4页
简 介:
INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC4245 DESCRIPTION High Current-Gain Bandwidth Product fT= 2400MHz TYP. @VCE = 10 V, IC = 2 mA Low Noise APPLICATIONS TV tuner , UHF mixer applications VHF~UHF band RF amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA IB B Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 25 mA PC 0.1 W TJ 125 ℃ Tstg Storage Temperature Range -55~125 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4245 TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 30V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 2V; IC= 0 1.0 μA V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 15 V hFE DC Current Gain IC= 5mA ; VCE= 10V 40 200 fT Current-Gain—Bandwidth Product IC= 2mA ; VCE= 10V 1500 2400 MHz Cre Feed-Back Capacitance IE= 0 ; VCB= 10V; f= 1MHz 0.6 0.9 pF Gce Conversion Gain IC= 2mA ; VCC= 10V; f= 800MHz fL= 830MHz(+2dBm) 12 17 dB NF Noise Figure 8 13 dB isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2S……
