器件名称:
2SC4296
功能描述:
Silicon NPN Power Transistor
文件大小:
241.37KB 共2页
简 介:
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4296 DESCRIPTION Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V(Min) High Switching Speed APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w s c s i . w VALUE 500 V 400 V 10 V 10 A 20 A 4 A UNIT n c . i m e IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature PC 75 W ℃ TJ 150 Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC4296 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A B 1.3 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 10V; IC= 0 100 μA hFE DC Current Gain IC= 6A; VCE= 4V COB Output Capacitance fT Current-Gain—Bandwidth Product Switching Times ton Turn-On Time w w s c s i . w IE= 0; VCB= 10V; f= 1MHz IE= -0.7A; VCE= 12V n c . i m e 10 30 85 pF 10 MHz 1.0……
