器件名称:
2SD1025
功能描述:
Silicon NPN Power Transistors
文件大小:
124.56KB 共3页
简 介:
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1025 DESCRIPTION ·With TO-220 package ·High DC current gain ·DARLINGTON PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg R O 体 T U 导 D 半 N O C 固电 I EM S E G N A INCH PARAMETER CONDITIONS VALUE 200 Collector-base voltage Open emitter Collector-emitter voltage Open base 200 7 Emitter-base voltage Open collector Collector current 8 Collector current-Peak 12 Base current 0.5 Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25℃ 1.0 50 150 -55~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL RΘj-C PARAMETER Thermal resistance junction to case VALUE 2.5 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=0.1A ; IB=0 IC=5A; IB=10mA IC=5A ;IB=10mA VCB=200V ;IE=0 VCE=200V; IB=0 VEB=7V; IC=0 IC=5A ; VCE=3V IC=0.8A ; VCE=10V 1500 20 MIN 200 TYP. 2SD1025 MAX UNIT V 1.5 2.0 0.1 0.1 5.0 30000 V V mA mA mA Switching times ton ts tf R O 体 T U 导 D 半 N O C 固电 I EM S E G N……
