器件名称: 2SD1027
功能描述: isc Silicon NPN Darlington Power Transistor
文件大小: 103.27KB 共2页
简 介:INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD1027
DESCRIPTION High DC Current Gain : hFE= 1500(Min.)@ IC= 10A, VCE= 3V High Collector-Emitter Sustaining Voltage: VCEO(SUS) = 200V(Min)
APPLICATIONS Designed for general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC ICM IB
B
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current- Continuous Base Current- Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range
VALUE 200 200 7 15 22 1 2 100 150 -55~150
UNIT V V V A A A A W ℃ ℃
IBM PC Tj Tstg
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.25 UNIT ℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCE(sat) VBE(sat) ICBO ICEO IEBO fT hFE PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff current Collector Cutoff current Emitter Cutoff Current Current-Gain—Bandwidth Product DC Current Gain CONDITIONS IC= 0.1A, IB= 0 IC= 10A ,IB= 30mA IC= 10A ,IB= 30mA VCB= 200V, IE= 0 VCE= 200V, IB= 0
B
2SD1027
MIN 200
TYP.
MAX
UNIT V
1.5 2.0 0.1 0.1 5 20 1500
V V mA mA mA MHz
VEB= 7V; IC= 0 ……
