器件名称:
2SD1118
功能描述:
Silicon NPN Power Transistor
文件大小:
241.16KB 共2页
简 介:
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1118 DESCRIPTION Collector-Emitter Breakdown Voltage: V(BR)CEO= 50V(Min) High DC Current Gain: hFE= 300V(Min.) @IC= 1A Low Collector Saturation Voltage High Reliability APPLICATIONS Switching regulators DC-DC converter Solid sate relay General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage w ww s c s .i VALUE 80 50 15 10 3 50 150 -55~150 UNIT V n c . i m e V V A A W ℃ ℃ Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.5 UNIT ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1118 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 50 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 15 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.1A B 0.5 V VB E(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.1A B ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Cur……
