器件名称:
2SD1127
功能描述:
Silicon NPN Darlington Power Transistor
文件大小:
236.0KB 共2页
简 介:
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1127 DESCRIPTION Collector-Emitter Sustaining Voltage: VCEO(SUS)= 120V(Min) High DC Current Gain : hFE= 1000(Min) @IC= 10A Low Saturation Voltage APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w s c s i . w VALUE 120 V 120 V 7 V 10 A 15 A UNIT n c . i m e IC Collector Current-Continuous ICP Collector Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature PC 50 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD1127 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA; RBE= ∞ 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 25mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 25mA 2.0 V ICBO Collector Cutoff Current VCB= 120V; IE=0 100 μA hFE DC Current Gain IC= 10A; VCE= 2V Switching times ton Turn-On Time toff Turn-Off Time w w s c s i . w IC= 5A, IB1= -IB2= 10mA n c . i m e 1000 0.8 μs 8.0 μs isc Website：www.iscsemi.cn 2 ……
